BAW75-TR(2007) データシートの表示（PDF） - Vishay Semiconductors

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BAW75-TR
(Rev.:2007)

Small Signal Switching Diode

Vishay Semiconductors 

BAW75

Vishay Semiconductors

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Min

Forward voltage

IF = 30 mA

VF

Reverse current

VR = 25 V

IR

VR = 25 V, Tj = 150 °C

IR

Breakdown voltage

IR = 5 µA, tp/T = 0.01, tp = 0.3 ms V(BR)

35

Diode capacitance

VR = 0, f = 1 MHz, VHF = 50 mV

CD

Reverse recovery time

IF = IR = 10 mA, IR = 1 mA

trr

IF = 10 mA, VR = 6 V,

trr

IR = 1 mA, RL = 100 Ω

Package Dimensions in millimeters (inches): DO35

Typ.

Max

Unit

1000

mV

100

nA

100

μA

V

4

pF

4

ns

2

ns

Cathode Identification

26 min. (1.024)

3.9 max. (0.154)

26 min. (1.024)

Rev. 6 - Date: 29.January 2007

Document no.: 6.560-5004.02-4

94 9366

www.vishay.com

2

Document Number 85550

Rev. 1.6, 19-Feb-07

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