BAW75 データシートの表示（PDF） - Vishay Semiconductors
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BAW75 Datasheet PDF : 3 Pages
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BAW75
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
IF = 30 mA
VF
1000
mV
Reverse current
VR = 25 V
IR
VR = 25 V, Tj = 150 °C
IR
100
nA
100
μA
Breakdown voltage
IR = 5 µA, tp/T = 0.01,
tp = 0.3 ms
V(BR)
35
V
Diode capacitance
VR = 0, f = 1 MHz,
VHF = 50 mV
CD
4
pF
IF = IR = 10 mA, IR = 1 mA
trr
4
ns
Reverse recovery time
IF = 10 mA, VR = 6 V,
IR = 1 mA, RL = 100 Ω
trr
2
ns
Package Dimensions in millimeters (inches): DO-35
Cathode identification
26 (1.024) min.
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
94 9366
3.9 (0.154) max.
26 (1.024) min.
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 85550
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.7, 17-Aug-10
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