BC546 データシートの表示（PDF） - Motorola => Freescale

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BC546

NPN general purpose transistors

Motorola => Freescale 

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by BC546/D

Amplifier Transistors

NPN Silicon

COLLECTOR

1

BC546, B

BC547, A, B, C

BC548, A, B, C

2

BASE

3

EMITTER

MAXIMUM RATINGS

Rating

BC BC BC

Symbol 546 547 548 Unit

Collector – Emitter Voltage

Collector – Base Voltage

Emitter – Base Voltage

Collector Current — Continuous

Total Device Dissipation @ TA = 25°C

Derate above 25°C

VCEO

VCBO

VEBO

IC

PD

65 45 30 Vdc

80 50 30 Vdc

6.0

Vdc

100

mAdc

625

mW

5.0

mW/°C

Total Device Dissipation @ TC = 25°C

PD

Derate above 25°C

1.5

Watt

12

mW/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient RqJA

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage

(IC = 1.0 mA, IB = 0)

BC546

BC547

BC548

V(BR)CEO

65

45

30

Collector – Base Breakdown Voltage

(IC = 100 µAdc)

BC546

BC547

BC548

V(BR)CBO

80

50

30

Emitter – Base Breakdown Voltage

(IE = 10 mA, IC = 0)

BC546

BC547

BC548

V(BR)EBO

6.0

6.0

6.0

Collector Cutoff Current

(VCE = 70 V, VBE = 0)

(VCE = 50 V, VBE = 0)

(VCE = 35 V, VBE = 0)

(VCE = 30 V, TA = 125°C)

BC546

ICES

—

BC547

—

BC548

—

BC546/547/548

—

1

2

3

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

Typ

Max

Unit

—

—

V

—

—

—

—

—

—

V

—

—

—

—

—

—

V

—

—

—

—

0.2

15

nA

0.2

15

0.2

15

—

4.0

µA

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

1

© Motorola, Inc. 1996

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