BC846AWT1 データシートの表示（PDF） - ON Semiconductor
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BC846AWT1 Datasheet PDF : 8 Pages
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ON Semiconductort
General Purpose Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 which is
designed for low power surface mount applications.
MAXIMUM RATINGS
Rating
Symbol BC846 BC847 BC848 Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
VCEO
65
45
30
V
VCBO
80
50
30
V
VEBO
6.0
6.0
5.0
V
IC
100
100
100 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board, (1)
TA = 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Junction and Storage Temperature
PD
RqJA
PD
TJ, Tstg
150
833
2.4
–55 to +150
mW
°C/W
mW/°C
°C
DEVICE MARKING
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L
BC846AWT1
Series,
BC847AWT1
Series,
BC848AWT1
Series
3
1
2
CASE 419–02, STYLE 3
SOT–323/SC–70
COLLECTOR
3
1
BASE
2
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
BC846 Series
BC847 Series
BC848 Series
V(BR)CEO 65
—
—
V
45
—
—
30
—
—
Collector–Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0)
BC846 Series
BC847 Series
BC848 Series
V(BR)CES 80
—
—
V
50
—
—
30
—
—
Collector–Base Breakdown Voltage
(IC = 10 mA)
BC846 Series
BC847 Series
BC848 Series
V(BR)CBO 80
—
—
V
50
—
—
30
—
—
Emitter–Base Breakdown Voltage
(IE = 1.0 mA)
BC846 Series
BC847 Series
BC848 Series
V(BR)EBO 6.0
—
—
V
6.0
—
—
5.0
—
—
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in
ICBO
—
—
15
nA
—
—
5.0
µA
© Semiconductor Components Industries, LLC, 2001
1
September, 2001 – Rev. 2
Publication Order Number:
BC846AWT1/D
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