NXP Semiconductors
BC848 series
30 V, 100 mA NPN general-purpose transistors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
collector-base voltage
open emitter
-
collector-emitter voltage open base
-
emitter-base voltage
open collector
-
collector current
-
peak collector current
single pulse;
-
tp ≤ 1 ms
peak base current
single pulse;
-
tp ≤ 1 ms
total power dissipation
Tamb ≤ 25 °C
[1]
SOT23
-
SOT323
-
Tj
junction temperature
-
Tamb
ambient temperature
−65
Tstg
storage temperature
−65
Max
Unit
30
V
30
V
5
V
100
mA
200
mA
200
mA
250
mW
200
mW
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT23
SOT323
Conditions
in free air
Min
[1]
-
-
Typ Max
-
500
-
625
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
K/W
K/W
BC848_SER_7
Product data sheet
Rev. 07 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
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