BC848 データシートの表示（PDF） - NXP Semiconductors.
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BC848 Datasheet PDF : 13 Pages
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NXP Semiconductors
BC848 series
30 V, 100 mA NPN general-purpose transistors
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
ICBO
IEBO
collector-base cut-off
current
emitter-base cut-off
current
VCB = 30 V; IE = 0 A
VCB = 30 V; IE = 0 A;
Tj = 150 °C
VEB = 5 V; IE = 0 A
-
-
-
-
-
-
hFE
DC current gain
VCE = 5 V; IC = 10 μA
VCE = 5 V; IC = 2 mA
BC848B
-
150
200 290
BC848W
110 -
VCEsat collector-emitter
IC = 10 mA; IB = 0.5 mA
-
90
saturation voltage
IC = 100 mA; IB = 5 mA
[1] -
200
VBEsat base-emitter
IC = 10 mA; IB = 0.5 mA [2] -
700
saturation voltage
IC = 100 mA; IB = 5 mA
[2] -
900
VBE
base-emitter voltage IC = 2 mA; VCE = 5 V
[3] 580 660
IC = 10 mA; VCE = 5 V
[3] -
-
fT
transition frequency VCE = 5 V; IC = 10 mA;
100 -
f = 100 MHz
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
-
2.5
f = 1 MHz
NF
noise figure
VCE = 5 V; IC = 200 μA;
-
2
RS = 2 kΩ; f = 1 kHz;
B = 200 Hz
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
[2] VBEsat decreases by approximately 1.7 mV/K with increasing temperature.
[3] VBE decreases by approximately 2 mV/K with increasing temperature.
Max
15
5
100
-
450
800
250
600
-
-
700
770
-
3
10
Unit
nA
μA
nA
mV
mV
mV
mV
mV
mV
MHz
pF
dB
BC848_SER_7
Product data sheet
Rev. 07 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
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