BC856 データシートの表示（PDF） - Kodenshi Auk Co., LTD
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BC856 Datasheet PDF : 4 Pages
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BC856
PNP Silicon Transistor
Descriptions
• General purpose application
• Switching application
PIN Connection
Features
• High voltage : VCEO=-55V
• Complementary pair with BC846
Ordering Information
Type NO.
Marking
BC856
TA □ □
①② ③
① Device Code ② hFE Rank ③ Year&Week Code
B
E
C
SOT-23
Package Code
SOT-23
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
-80
-55
-5
-100
200
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Emitter breakdown voltage BVCEO IC=-2mA, IB=0
Base-Emitter turn on voltage
VBE(ON) VCE=-5V, IC=-2mA
Base-Emitter saturation voltage
VBE(sat) IC=-100mA, IB=-5mA
Collector-Emitter saturation voltage VCE(sat) IC=-100mA, IB=-5mA
Collector cut-off current
DC current gain
Transition frequency
ICBO
hFE*
fT
VCB=-35V, IE=0
VCE=-5V, IC=-2mA
VCB=-5V, IC=-10mA
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
Noise figure
NF
VCE=-5V, IC=-200μA,
f=1KHz,Rg=2KΩ
* : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800
KSD-T5C030-000
(Ta=25°C)
Min. Typ. Max. Unit
-55
-
-
V
-
-
-700 mV
- -900
-
mV
-
-
-650 mV
-
-
-15
nA
110
-
800
-
-
150
-
MHz
-
-
4.5
pF
-
-
10
dB
1
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