BC875 データシートの表示（PDF） - NXP Semiconductors.
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BC875 Datasheet PDF : 7 Pages
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Philips Semiconductors
NPN Darlington transistors
Product specification
BC875; BC879
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCES
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
BC875
BC879
collector-emitter voltage
BC875
BC879
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
ambient temperature
CONDITIONS
open emitter
VBE = 0 V
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
−
60
V
−
100
V
−
45
V
−
80
V
−
5
V
−
1
A
−
2
A
−
0.2
A
−
0.83
W
−65
+150
°C
−
150
°C
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
150
UNIT
K/W
2004 Nov 05
3
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