BC875 データシートの表示（PDF） - Siemens AG

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BC875

NPN Silicon Darlington Transistors

Siemens AG 

BC 875

… BC 879

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage

IC = 50 mA

BC 875

BC 877

BC 879

Collector-base breakdown voltage

IC = 100 µA

BC 875

BC 877

BC 879

Emitter-base breakdown voltage, IE = 100 µA

Collector cutoff current

VCE = 0.5 × VCEmax

Collector cutoff current

VCB = VCBmax

VCB = VCBmax, TA = 150 ˚C

Emitter cutoff current, VEB = 4 V

DC current gain

IC = 150 mA; VCE = 10 V1)

IC = 500 mA; VCE = 10 V1)

Collector-emitter saturation voltage1)

IC = 500 mA, IB = 0.5 mA

IC = 1 A, IB = 1 mA

Base-emitter saturation voltage1)

IC = 1 A; IB = 1 mA

AC characteristics

Transition frequency

IC = 200 mA, VCE = 5 V, f = 20 MHz

Symbol

Values

Unit

min. typ. max.

V(BR)CE0

45 –

60 –

80 –

V(BR)CB0

60 –

80 –

100 –

V(BR)EB0

5

–

ICE0

–

–

ICB0

IEB0

hFE

VCEsat

VBEsat

–

–

–

–

–

–

1000 –

2000 –

–

–

–

–

–

–

V

–

–

–

–

–

–

–

500 nA

100 nA

20

µA

100 nA

–

–

–

V

1.3

1.8

2.2

fT

–

150 –

MHz

1) Pulse test: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group

2

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