BCW69LT1 データシートの表示（PDF） - Willas Electronic Corp.

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BCW69LT1

General Purpose Transistors

Willas Electronic Corp. 

WILLAS

BCW69LTF1M120-M+

THRU

1.0GA SeUnRFeArCaE lMPOUuNrTpSCoHsOTeTKTYrBaAnRRsIEiRsRtoECrTsIFIERS -20V- 200VBCW70LTF1M1200-M

SOD-123+ PACKAGE

Pb Free Produc

Features

Package outline

PNP Silicon • Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

Featr•uLoeopswtimpirzoefibleosaurdrfaspceacmeo. unted application in order to

We d•eLcolawrepothwaet rthloesms,ahteigrhiael offficpireondcuyc.t

com•plHiaingchecwuritrhenRtocHaSparbeiqliutyir,elmowenfotsr.ward voltage drop.

3

COLLECTOR

SOD-123H

0.146(3.7)

0.130(3.3)

Pb-F•reHeigphacskuarggee cisapaavabiillaitby.le

RoH•SGpruoadrudcrtinfogrfpoarcokvinegrvcooldtaegseufpfirxo”tGec” tion. 1

Halo•geUnltfrraeehipgrho-dsupcet efodr spwacitkcinhgincgo.de suffix “H” BASE

• Silicon epitaxial planar chip, metal silicon junction.

• Lead-free parts meet environmental standards of

MIL-STD-19500 /228

2

EMITTER

• RoHS product for packing code suffix "G"

MAXIMHUalMogRenAfTreIeNpGroSduct for packing code suffix "H"

Mechanical data

Rating

Symbol

Value

Unit

• Epoxy : UL94-V0 rated flame retardant

Collector–Emitter Voltage

• Case : Molded plastic,

SOD-V1C2E3OH

– 45

Vdc

Em• itTteerr–mBiansaelsV:oPltlaagteed terminals,VsEoBlOderable pe–r5M.0IL-STD-7V5d0c,

0.031(0.8) Typ.

SOT–23

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

0.040(1.0)

0.024(0.6)

0.031(0.8) Typ.

Collector CurrenMt —etChodnti2n0u2o6us I C

– 100

mAdc

• Polarity : Indicated by cathode band

Dimensions in inches and (millimeters)

THER• MMAouLnCtinHgAPRoAsiCtiTonER: AISnyTICS

Ch•aWraecitgehrits:tiAc pproximated 0.011 gram

Symbol

Max

Unit

RatingTTsoAt=aatl2D255e°℃CvicMeaDmAibsXiseIipMnat UttieoMmn pFReRrA–at5TurIBeNouaGnrdlSe,s(As1)oNthDerEwLisEe CspTePRciDfIieCdA. L

Derate above 25°C

CHA2R2A5 CTERISmTWICS

1.8

mW/°C

Single phase half wave, 60Hz, resistive of inductive load.

Thermal Resistance, Junction to Ambient

For capacitive load, derate current by 20%

RθJA

556

°C/W

Total Device Dissipation

Alumina SubstraRteA, (T2I)NTGAS= 25°C

MarkinDgeCroadtee above 25°C

SYMBOLPFDM120-MH FM13300-M0H FM140-MmH WFM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M

12

132.4 14 mW/°C15

16

18

10

115 120

MaximTumheRrmecaul rRreenstisPtaeankceR,eJvuenrcsteioVnotlotaAgembient

VRRM RθJA 20

34017 40 °C/W50

60

MaximJuumncRtMioSn aVnodltaSgteorage Temperature

VRMSTJ , Tstg14 –5521to +150 28 °C 35

42

80

100

150

200

56

70

105

140

Maximum DC Blocking Voltage

VDC

20

30

40

50

60

80

100

150

200

MaDxEimVumICAEveMraAgeRFKoIrNwGard Rectified Current

IO

1.0

Peak FoBrwCaWrd6S9uLrTge1C=uHrre1n;t 8B.3CmWs7s0inLgTle1 h=aHlf 2sine-wave IFSM

30

superimposed on rated load (JEDEC method)

TyEpiLcaEl CThTeRrmICalARLesCisHtaAncReA(NCoTteE2R) ISTICS (TA = 25°CRuΘnJAless otherwise noted.)

40

Typical Junction CapCahciataranccete(rNisottiec 1)

Operating Temperature Range

StoOraFgFe TCeHmApeRraAtuCreTREaRnIgSeTICS

CJ

TJ

TSTG

Symbol

-55 to +125

Min

Max120 Unit

-55 to +150

- 65 to +175

Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0 )

V (BR)CEO

– 45

—

Vdc

Collector–EmCittHeAr RBAreCaTkEdRowISnTIVCoSltage (IC = –100SYµMABdcO,LVFEMB1=200-M) H FM13V0-(MBRH)CFEMS 140-MH F–M51050-MH FM1—60-MH FM1V80d-cMH FM1100-MH FM1150-MH FM1200-MH

Maximum Forward Voltage at 1.0A DC

VF

0.50

0.70

0.85

0.9

0.92

Emitter–Base Breakdown Voltage (I

Maximum Average Reverse Current at @T

RatedCDoClleBclotocrkiCngutVooffltCaguerrent

@T

AE==2–51℃0 µAdc,

A=125℃

IC

IR

=

0)

V (BR)EBO

I CEO

– 5.0

—

Vdc

0.5

10

(VCE = –20 Vdc, I E = 0 )

NOTES:

1- Meas(VurCeEd=at–120MHVZdca,nIdEa=pp0lie, dTArev=er1s0e0v°oClta) ge of 4.0 VDC.

2- T1h.eFrmRa–l 5Re=s1is.t0anxce0.F7r5omx J0u.0n6ct2ioinnt.o Ambient

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

—

– 100

nAdc

—

– 10

µAdc

2012-06

2012-

WILLAS ELECTRONIC COR

WILLAS ELECTRONIC CORP.

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