BCW69LT1 データシートの表示（PDF） - Willas Electronic Corp.
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BCW69LT1 Datasheet PDF : 7 Pages
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WILLAS BCW69LTF1M120-M+
1.0GA SeURnFeACrEaMl OPUuNTrSpCoHOsTeTKTYrBaARnRsIEiRsRtEoCrTsIFIERS -20V- 200VBCW70LTF1M1T2H0R0U-M
SOD-123+ PACKAGE
Pb Free Produc
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
ELECToRptIiCmAizLe CboHaArdRsApCaTceE.RISTICS (TA = 25°C unless otherwise noted) (Continued)
• Low powCehralroascste, rhisigtihcefficiency.
Symbol
Min
ON C•• HHHAiiggRhhAscuuCrrTgreEenRct acISpaaTpbaICibliSitlyit.y, low forward voltage drop.
• GDuCarCdurrirnegntfoGraoinvervoltage protection.
hFE
• U(lItCr=a –h2ig.0h-msApedce,dVsCwE =itc–h5i.n0gV. dc ) BCW69LT1
120
• Silicon epitaxial planar chip, metaBl CsiWlic7o0nLTju1nction.
215
0.146(3.7)
0.1M30a(3x.3)
260
500
• LCeoaldle-cfrtoere–EpmaritttsermSeaetut reantivoinroVnomltaegnetal standards of
M( IILC -=S–TD10-1m9A5d0c0, /IB22=8–0.5 mAdc )
• RBoaHsSe–pEromdiuttcetrfOornpVaoclktaingge code suffix "G"
H(aIlCo=ge–n2f.r0eempArdocd,uVctCfEor=p–a5ck.0inVgdcco)de suffix "H"
SMAMLLe–ScIhGaNAnLicCaHlAdRAaCtaTERISTICS
V CE(sat)
V BE(on)
—
– 0.6
– 0.3
– 0.75
• EOpuotxpyut:CUaLp9a4c-itVan0created flame retardant
• C(aIsE=e 0: MVoClBd=ed–1p0laVsdtci,cf, =SO1.D0 -M1H23z)H
C obo
—
0.031(0.8) Typ.
7.0
•
TNeormiseinFailgsu:rPe lated
terminals,
solderable
per
,
MIL-STD-750
(V CE= – 5.0 VdMc,eI Ct=h–od0.22m0A2d6c, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
NF
—
10
Un0i.t012(0.3) Typ.
—
0.071(1.8)
0.056(1.4)
Vdc
Vdc
0.040(1.0)
0.024(0.6)
pF
0.031(0.8) Typ.
dB
Ord•eProilnargityIn: Ifnodricmateadtiboyncathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
Device
Marking
Shipping
• Weight : Approximated 0.011 gram
BCW69LT1
H1
3000/Tape&Reel
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
BCW70LT1
H2
3000/Tape&Reel
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
13
14
15
16
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200
VRMS
14
21
28
35
42
56
70
105
140
VDC
20
30
40
50
60
80
100
150
200
IO
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
IFSM
RΘJA
CJ
TJ
TSTG
-55 to +125
30
40
120
- 65 to +175
-55 to +150
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70
0.85
0.9
0.92
IR
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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