BCW69LT1 データシートの表示（PDF） - Willas Electronic Corp.
部品番号
コンポーネント説明
メーカー
BCW69LT1 Datasheet PDF : 7 Pages
| |||
WILLAS
BCW69LTF1MT1H2R0U-M+
1.0GA SeUnRFeArCaElMPOUuNrTpSCoHsOTeTKTYrBaAnRRsIEisR tRoECrTsIFIERS -20V- 200VBCW70LTF1M1200-M
SOD-123+ PACKAGE
Pb Free Produ
TYPICAL NOISE CHARACTERPISaTcICkSage outline
Features
• Batch process design, excellent powe(rVdiCsEsi=pa–ti5o.n0oVffdecr,s T A = 25°C)
better reverse leakage current and thermal resistance.
1•0Low profile surface mounted application in order to
10.0
optimize board space.
BANDWIDTH = 1.0 Hz
7.0
7•.0Low power loss, high efficiency.
R S~ ~ 0
5.0
• High
5•.0High
current capaIbC=il1it0y,µlAow
surge capability.
forward
voltage
drop.
3.0
• Guardring for overvoltage protection.
2.0
SOD-123H
IC=1.0mA
BANDWIDTH = 1.0 Hz
0.1
0.1
4
3
6(3.7)
0(3.R3)S
~ ~
0.012(0.3) Typ.
• Ultra high-speed 3s0wµiAtching.
3•.0Silicon epitaxial p1la0n0aµrAchip, metal silicon junction.
1.0
0.7
• Lead-free parts me3e0t0eµAnvironmental standards of
0.5
2.0M1I.L0-mSATD-19500 /228
• RoHS product for packing code suffix "G"
0.3
300µA
100µA
30µA
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
0.2
Mechanical data
10µA
1.0
• Epoxy : UL94-V0 rated flame retardant
10 20
50 100 200 500 1.0k 2.0k
5.0k 10k
0.1
10 20
50 100 200
500 1.0k 2.0k
5.0k
0.040(1.0)
0.024(0.6)
10k
• Case : Molded plastic, SOD-123H
f, FREQUENCY (Hz)
,
• Terminals :Plated terminals, solderable per MIL-STD-750
FiMgeutrheo1d.2N0o2i6se Voltage
0.031(0.8) Typ.
f, FREQUENCY (Hz)
Figure 2. Noise Current
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
NOISE FIGURE CONTOURS
(V CE = – 5.0 Vdc, T A = 25°C)
Dimensions in inches and (millimeters)
1.0M
1.0M
500k MAXIMUM RATINGSBAANNDWDIDETHL=E1.C0 HTzRICAL C5H00kARACTERISTICS
BANDWIDTH = 1.0 Hz
Rating2s0a0kt 25℃ ambient temperature unless otherwise specified. 200k
Single1p0h0kase half wave, 60Hz, resistive of inductive load.
100k
For cap5a0ckitive load, derate current by 20%
50k
20k
0.5 dB RATINGS
Marking 1C0okde
5.0k
Maximum2.0Rk ecurrent Peak Reverse1V.0odltBage
Maximum1.0Rk MS Voltage
SYMBOL FM120-MH F2M0k130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
VRRM
12 10k13
20 5.0k30
2.0k
14
40
150.5 dB 16
50
60
2.0dBVRMS
14
21
1.0k
28
35
42
18
10
80
100
1.0dB
56
70
115 120
150
200
105
140
Maximum50D0 C Blocking Voltage
VDC
20 50030
40
50
60
2.080dB
100
150
200
3.0 dB
3.0 dB
Maximum20A0 verage Forward Rectified Current
5I.O0 dB
200
1.0
5.0 dB
100
100
Peak Forwa1r0d Surge20Curr3e0nt 8.350ms7s0ing1l0e0half si2n0e0-wa3v0e0 5I0F0SM700 1.0K
10
20 30 50 70 100 30200 300 500 700 1.0K
superimposed on
Typical Thermal
Typical Junction
RrCaeatespFdiasIilcCgtoaiat,unadCcrnee(OcJeE(L3ND(L.NoEENtoeCCtae2Tmr)1Ore)otRhwoCd)BUaRnRdE,N1T0(0µAH)RzCΘJJA
FiIgC u, rCeO4L.LENCaTrrOoRwC14B2U00aRnRdE,N1T.0(µkAH) z
Operating Temperature Range
TJ
-55 to +125
-55 to +150
Storage1.T0Memperature Range
500k
TSTG
10 Hz to 15.7KHz
- 65 to +175
200k
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Maximu1m00Fk orward Voltage at 1.0A DC
VF
N0o.i5se0 Figure is Defin0e.d70as:
0.85
0.9
0.92
50k
Maximum Average Reverse Current at @T A=25℃
Rated DC20kBlocking Voltage
@T A=125℃
IR
10k
0.5dB
NF = 20 log 10 ( –e–n–2 –+–44K–KT–TR–RS–+–01I–n0.25–R–S–2 –)1/ 2
S
NOTES: 5.0k
1- Measu2r.e0dk at 1 MHZ and applied reverse voltage of 4.01.V0dDBC.
2- Therm1a.l0Rk esistance From Junction to Ambient
500
2.0dB
3.0 dB
200
5.0 dB
e n = Noise Voltage of the Transistor referred to the input. (Figure 3)
I n = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10 –23 j/°K)
T = Temperature of the Source Resistance (°K)
R s = Source Resistance ( Ω )
100
10
20 30 50 70 100
200 300 500 700 1.0K
I C , COLLECTOR CURRENT (µA)
Figure 5. Wideband
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
Share Link: 