BCW69LT1 データシートの表示（PDF） - Willas Electronic Corp.

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BCW69LT1

General Purpose Transistors

Willas Electronic Corp. 

WILLAS

BCW69LTF1M120-M

THRU

1.0GA eSUnReFArCaElMPOUuNrTpSCoHsOeTTKTYrBaAnRRsIEisR tRoECrTsIFIERS -20V- 200VBCW70LTF1M1200-M

SOD-123+ PACKAGE

Pb Free Produ

Features

Package outline

• Batch process design, excellent power dissipation offers

•

better reverse leakage curre

Low profile surface mounted

natpapnlTidcYathtPieoIrnCmiAanlLorreSdseTisrAttaoTnIcCe.CHARACTERISTICS

SOD-123H

optimize board space.

• Low power loss, high efficiency.

• High current capability, low forward voltage drop.

1•.0 High surge capability.

• Guardring for overvoltage protection. T J = 25°C

0•.8 Ultra high-speed switching.

• Silicon epitaxial planar chip, metal silicon junction.

•

0.6

Lead-freI Ce=

p1.a0rmt sA m e e10t

emnAvironm5e0nmtaAl

sta1n00dmaArds

of

MIL-STD-19500 /228

• RoHS product for packing code suffix "G"

100

T A = 25°C

PULSE WIDTH =300 µs

80 DUTY CYCLE<2.0%

300µA

60

0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

350µA

I B= 400 mA

0.071(1.8)

0.056(1.4)

250 µA

200 µA

150 µA

0.4 Halogen free product for packing code suffix "H"

40

Mechanical data

100 µA

0•.2 Epoxy : UL94-V0 rated flame retardant

20

0.040(1.0)

50µA 0.024(0.6)

• Case : Molded plastic, SOD-123H

0.031(0.8) Typ.

0.031(0.8) Typ.

•0

Terminals

:Plated

terminals,

solderable

per

,

MIL-STD-750

0

0.002 0.0050.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20

0

5.0

10

15

20

25

30

35

40

Method 2026

• Polarity : IndIiBca, tBeAdSbEy CcaUtRhRodEeNTba(mndA)

• MouFnitginugrPeo6s.itCioonll:eAcntoyr Saturation Region

V CE , COLLECTDOimRen–sEioMnsITinTEinRcheVsOaLnTdA(mGiEllim(VetOerLsT) S)

Figure 7. Collector Characteristics

• Weight : Approximated 0.011 gram

1.4

1.6

T J=25M°CAXIMUM RATINGS AND ELECTRICAL CHARA*CAPTPELIRESISfoTr IICC/ ISB< h FE / 2

1.2

Ratings at 25℃ ambient temperature unless otherwise specified.

0.8

Single1.p0hase half wave, 60Hz, resistive of inductive load.

∗ θ VC for V CE(sat)

25°C to 125°C

For capacitive load, derate current by 20%

0

0.8

V BE(sat) @ I RC /AI BT=IN1G0 S

–55°C to 25°C

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M

Marking0.6Code

Maximum

V

Recurrent

PBEe(oan)@k RVeCvEe=r1s.e0

V

Voltage

0.4

Maximum RMS Voltage

Maximu0m.2 DC BVloCcE(ksait)n@g VI Co/lItaB g=e10

Maximum0 Average Forward Rectified Current

12

VRRM

20

VRMS

14

VDC

20

IO

–103.8

14

15

30

40

50

–211.6

28

35

30

θ VB4f0or V BE 50

–2.4

16

18

10

115 120

60

2850°C to 125°1C00

150

200

42

56

70

105

140

60

80 –55°C 1to0205°C 150

200

1.0

0.1 0.2 0.5 1.0 2.0

5.0 10 20

50 100

Peak Forward Surge Current 8.3 ms single half sine-wave IFSM

superimposed on ratedI Clo,adCO(JELDLECCTmOetRhoCd)URRENT (mA)

Typical Thermal ResistaFnicgeu(rNeot1e02.) “On” Voltages RΘJA

0.1 0.2 0.5 1.0 2.0

5.0 10 20

50 100

30

I C , COLLECTOR CURRENT (mA)

Figure 11. Tempe4ra0ture Coefficients

Typical Junction Capacitance (Note 1)

CJ

120

Operating Temperature Range

TJ

-55 to +125

-55 to +150

Storage Temperature Range

TSTG

- 65 to +175

CHARACTERISTICS

Maximum Forward Voltage at 1.0A DC

Maximum Average Reverse Current at @T A=25℃

Rated DC Blocking Voltage

@T A=125℃

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M

VF

0.50

0.70

0.85

0.9

0.92

IR

0.5

10

NOTES:

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

2- Thermal Resistance From Junction to Ambient

2012-06

2012-

WILLAS ELECTRONIC COR

WILLAS ELECTRONIC CORP.

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