BCW69LT1 データシートの表示（PDF） - Willas Electronic Corp.
部品番号
コンポーネント説明
メーカー
BCW69LT1 Datasheet PDF : 7 Pages
| |||
WILLAS
BCW69LTF1MT1H2R0U-M+
1.0GA SeUnRFeACraE Ml POUuNTrpSCoHOsTeTKTYrBaAnRRsIEiRsRtEoCrTsIFIERS -20V- 200VBCW70LTF1M1200-M
SOD-123+ PACKAGE
Pb Free Produc
Package outline
Feat
• Batch
ures
process
design,
eTxYcePllIeCnAt pLowDeYr NdiAssMipIaCti
oCnHoAffeRrsACTERISTICS
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
500 •
300 •
200 •
Low power loss, high efficiency.
High current capability, low forward
High surge capability.
V = 3.0 V
voICltaC/ICgB=e d10rop.
T J= 25°C
1000
700
500
• Guardring for overvoltage protection.
300
0.146(3.7)
0.130(3.3)
ts
V = –3.0 V
CC
IC
/I
0.012(0.3)
B= 10
Typ.
IB1=IB2
T J= 25°C
100 • Ultra high-speed switching.
200
70 • Silicon epitaxial planar chip, metal silicon junction.
50 • Lead-free parts meet environmental standards of
100
0.071(1.8)
0.056(1.4)
30
•
MIL-STD-19500 /228
RoHS product for packing
code
suffixt r"G"
20 Halogen free product for packing code suffix "H"
10 Mechantdi@caVlBEd(offa)=t0a.5 V
7.0 • Epoxy : UL94-V0 rated flame retardant
5.0
1•.0Case 2: .M0 o3ld.0ed p5l.a0 st7i.c0, S1O0 D-12230H 30 50 70 100
,
• TerminaIlsC :,PClaOtLeLdEtCerTmOiRnaClsU,RsRoEldNeTra(bmleA)per MIL-STD-750
FMigeuthroed1200.2T6urn–On Time
• Polarity : Indicated by cathode band
70
50
30
20
10
–1.0
tf
–2.0 –3.0 –5.0 –7.0 –10
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
–20 –30 –50 –70 –100
0.031(0.8) Typ.
I C , COLLECTOR CURRENT (mA)
Figure 11. Turn–Off Time
Dimensions in inches and (millimeters)
• Mounting Position : Any
500
10.0
• WT Je=ig2h5t°:CApproximated 0.011 gram
7.0
300
MAVXCIEM=2U0MV RATINGS AND ELECTRICAL CHARACTERISTICS
5.0
Ratings at 25℃ ambient tempe5r.a0tuVre unless otherwise specified.
Sing2le00phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
3.0
T J= 25°C
C ib
Marki1n0g0 Code
RATINGS
Maximum Recurrent Peak Reverse Voltage
70
Maximum RMS Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
123.0
14
15
16
18
10C ob
115
120
VRRM
20
30
40
50
60
80
100
150
200
VRMS
14
21
28
35
42
56
70
105
140
Maxim5u0m DC Blocking Voltage
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
Maximum Average Forward Rectified Current
VDC
20
20 30 50
IO
I C , COLLECTOR CURRENT (mA)
Peak ForwaFrdigSuurrgee 1C2ur.reCnut 8r.r3emnst–sGingaleinha—lf siBnea-wnadvwe idtIhFSPMroduct
superimposed on rated load (JEDEC method)
310.0
40
50
60
80
100
150
200
0.05 0.1 0.2
0.5 1.0 2.0
5.0 10 20
50
1.0
V R , REVERSE VOLTAGE (VOLTS)
Figure 13. Ca3p0acitance
Typical T1h.e0rmal Resistance (Note 2)
Typical Ju0.n7ction CaDpa=c0it.a5nce (Note 1)
Operating0.5Temperature Range
Storage
T0e.3mperature
Range
0.2
0.2
RΘJA
CJ
TJ
TSTG
-55 to +125
40
120
- 65 to +175
-55 to +150
CH0A.1RACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum0.F1orward Voltage at 1.0A DC
VF
Maximum0.0A7 verage Re0v.e0r5se Current at @T A=25℃
0.05
IR
Rated DC Blocking Vo0l.t0a2ge
@T A=125℃
0.50 FIGURE 16 0.70DUTY CYCLE, D 0=.t815/ t 2
0.9
D CU0R.5VES APPLY FOR POWER
P(pk)
PULS1E0 TRAIN SHOWN
0.92
0.03
NOTES: 0.02
0.01
SINGLE PULSE
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
t1
t2
READ TIME AT t 1 (SEE AN–569)
Z θJA(t) = r(t) • RθJA
T J(pk) – T A = P (pk) Z θJA(t)
2- Therm0a.l0R1 esistance From Junction to Ambient
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10 20
50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k
t, TIME (ms)
Figure 14. Thermal Response
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
Share Link: 