BCW69LT1 データシートの表示（PDF） - Willas Electronic Corp.

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BCW69LT1

General Purpose Transistors

Willas Electronic Corp. 

WILLAS

BCW69LTF1MT1H2R0U-M+

1.0GA SeUnRFeArCaE lMPOUuNrTpSCoHsOTeTKTYrBaAnRRsIEiRsRtoECrTsIFIERS -20V- 200VBCW70LTF1M1200-M

SOD-123+ PACKAGE

Pb Free Produc

Features

Package outline

• Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

• Low profile surface mounted application in order to

SOD-123H

optimize board space.

104

• Low power loss, high efficiency.

• HiVghCCc=u3r0reVnt capability, low forward voltage drop.

103 • High surge capability.

• Guardring for overvoIlCtEaOge protection.

102 • Ultra high-speed switching.

• Silicon epitaxial planar chip, metal silicon junction.

101 • Lead-free parts meet environmental sItaCBnOdards of

MIL-STD-19500 /228

AND

100 • RoHS product for packing code suIffCiExX @"GV" BE(off) = 3.0 V

Halogen free product for packing code suffix "H"

DESIGN NOTE: USE OF THERMA00L..1143R60((33E..73S)) PONSE DATA

0.012(0.3) Typ.

A train of periodical power pulses can be represented by the

model as shown in Figure 16. Using the model and the device

0.071(1.8)

thermal response the normalized effective transient thermal0r.e05s6i(s1-.4)

tance of Figure 14 was calculated for various duty cycles.

To find Z θJA(t) , multiply the value obtained from Figure 14 by the

steady state value R θJA .

Example:

Mechanical data

10–1

• Epoxy : UL94-V0 rated flame retardant

Dissipating 2.0 watts peak under the following conditions:

t 1 = 1.0 ms, t 2 = 5.0 ms. (D = 0.2)

0.040(1.0)

0.024(0.6)

• 10–2

–4•

Case : Molded plastic, SOD-123H

Te–r2mina0ls :P+la20ted +t4e0rmi+n6a0ls, +s8o0lde+r1a00ble+1p2e0 r

Using Figure 14 at a pulse width of 1.0

M+1I4L0-S+T1D60-7oT5fh0re,(tp) eisa0k.r2is2e.

in

0.031(0.8) Typ.

junction temperature

ms and D = 0.2,

is therefore

the

reading

0.031(0.8) Typ.

T J ,MJUeNthCoTdIO20N2T6EMPERATURE (°C)

• PFoiglaurritey 1: I5n.dTiycaptiecdalbCy ocalltehcotdoer bLaenadkage Current

∆T = r(t) x P (pk) x R θJA = 0.22 x 2.0 x 200 = 88°C.

For more information, see ADNim–e5n6s9io.ns in inches and (millimeters)

• Mounting Position : Any

• Weight : Approximated 0.011 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase half wave, 60Hz, resistive of inductive load.

For capacitive load, derate current by 20%

RATINGS

Marking Code

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M

12

13

14

15

16

VRRM

20

30

40

50

60

18

10

115 120

80

100

150

200

VRMS

14

21

28

35

42

56

70

105

140

VDC

20

30

40

50

60

80

100

150

200

IO

1.0

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Typical Thermal Resistance (Note 2)

Typical Junction Capacitance (Note 1)

Operating Temperature Range

Storage Temperature Range

IFSM

RΘJA

CJ

TJ

TSTG

-55 to +125

30

40

120

- 65 to +175

-55 to +150

CHARACTERISTICS

Maximum Forward Voltage at 1.0A DC

Maximum Average Reverse Current at @T A=25℃

Rated DC Blocking Voltage

@T A=125℃

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH

VF

0.50

0.70

0.85

0.9

0.92

IR

0.5

10

NOTES:

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

2- Thermal Resistance From Junction to Ambient

2012-06

2012-

WILLAS ELECTRONIC COR

WILLAS ELECTRONIC CORP.

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