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BCW69LT1 データシートの表示(PDF) - Willas Electronic Corp.

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BCW69LT1
Willas
Willas Electronic Corp. Willas
BCW69LT1 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
WILLAS
BCW69LTF1MT1H2R0U-M+
1.0GA SeURnFeACrEaMlOPUuNTrSpCoHOsTeTKTYrBaARnRsIEiRsRtEoCrTIsFIERS -20V- 200VBCW70LTF1M1200-M
SOD-123+ PACKAGE
Pb Free Produc
Features
Batch
better
process
reverse
design,
leakage
excellent po
current and
wtheerrdmisasl irpeasStiisoOtnanTocf-fee.2rs3
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
.122(3.10)
Silicon epitaxial planar chip, metal silico.1n0ju6n(c2ti.o7n0. )
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
,
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
Polarity : Indicated by cathode band
.080(2.04)
Mounting Position : An.y070(1.78)
Weight : Approximated 0.011 gram
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dime.n0s0ion8s(i0n .in2c0he)s and (millimeters)
.003(0.08)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.0R0A4TI(N0G.1S0)MAX.
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
12
13
14
15
16
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
.02V0D(C0.50) 20
30
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
.012I(O0.30)
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
DimensioRnΘsJAin inches and (millimeters)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
CJ
TJ
-55 to +125
Storage Temperature Range
TSTG
30
40
120
- 65 to +175
-55 to +150
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC 0.037
Maximum Average Reverse Current at @T0A.=9255℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH 0F.M031470-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.500.95
0.70
0.85
0.9
0.92
IR
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.

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