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BCX70 データシートの表示(PDF) - General Semiconductor

部品番号
コンポーネント説明
メーカー
BCX70
GE
General Semiconductor GE
BCX70 Datasheet PDF : 3 Pages
1 2 3
BCX70 Series
Small Signal Transistor (NPN)
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
DC Current Gain
BCX70G
VCE = 5 V, IC = 10 µA
BCX70H
VCE = 5 V, IC = 10 µA
30
BCX70J
VCE = 5 V, IC = 10 µA
40
BCX70K
VCE = 5 V, IC = 10 µA
100
BCX70G
VCE = 5 V, IC = 2 mA
120
BCX70H
BCX70J
hFE
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 2 mA
180
250
BCX70K
VCE = 5 V, IC = 2 mA
380
BCX70G
VCE = 1 V, IC = 50 mA
50
BCX70H
VCE = 1 V, IC = 50 mA
70
BCX70J
VCE = 1 V, IC = 50 mA
90
BCX70K
VCE = 1 V, IC = 50 mA
100
Collector-Emitter Saturation Voltage
VCEsat
IC = 10 mA, IB = 0.25 mA
IC = 50 mA, IB = 1.25 mA
50
100
Base-Emitter Saturation Voltage
VBEsat
IC = 10 mA, IB = 0.25 mA
IC = 50 mA, IB = 1.25 mA
600
700
Base-Emitter Voltage
VCE = 5 V, IC = 2 mA
550
VBE
VCE = 5 V, IC = 10 µA
VCE = 1 V, IC = 50 mA
Collector Cut-off Current
VCB = 45 V, VBE = 0 V
ICBO
VCB = 45 V, VBE = 0 V
TA = 150°C
Emitter Cut-off Current
IEBO
VEB = 4 V, IC = 0
Gain-Bandwidth Product
fT
VCE = 5 V, IC = 10 mA
f = 100 MHz
100
Collector-Base Capacitance
CCBO VCB = 10 V, f = 1 MHz, IE = 0 —
Emitter-Base Capacitance
CEBO VEB = 0.5 V, f = 1 MHz, IC = 0 —
Noise Figure
VCE = 5 V, IC = 200 µA,
F
RS = 2 k, f = 1 kHz,
B = 200 Hz
Small Signal Current Gain
BCX70G
BCX70H
BCX70J
hfe
VCE = 5 V, IC = 2 mA,
f = 1.0 kHZ
BCX70K
Turn-on Time at RL = 990(see fig. 1)
ton
VCC = 10 V, IC = 10 mA,
IB(on) = -IB(off) = 1 mA
Turn-off Time at RL = 990(see fig. 1)
toff
VCC = 10 V, IC = 10 mA,
IB(on) = -IB(off) = 1 mA
Typ
Max
Unit
220
310
460
630
350
550
mV
850
1050
mV
650
750
520
mV
780
20
nA
20
µA
20
nA
250
MHz
2.5
pF
8
pF
2
6
dB
200
260
330
520
85
150
ns
480
800
ns

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