BD240 データシートの表示（PDF） - Comset Semiconductors

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BD240

MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS.

Comset Semiconductors 

PNP BD240 – A – B – C

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Max Unit

VCE=-30 V

BD240

-

-

ICEO

Collector Cutoff Current VCE=-30 V

VCE=-60 V

BD240A -

BD240B -

-

-

-0.3 mA

VCE=-60 V

BD240C -

-

BD240

-

-

IEBO

Emitter Cutoff Current

VBE=-5 V

BD240A -

BD240B -

-

-

-1.0 mA

BD240C -

-

VCE=-45 V

BD240

-

-

ICES

Collector Cutoff Current VCE=-60 V

(VBE = 0)

VCE=-80 V

BD240A -

BD240B -

-

-

-0.2 mA

VCE=-100 V

BD240C -

-

VCEO(sus)

Collector-Emitter

Sustaining Voltage

(IB = 0) (*)

IC =-30mA

BD240

BD240A

BD240B

BD240C

-45

-60

-80

-100

V

BD240

VCE=-4 V

IC=-0.2 A

BD240A

BD240B

40

-

-

hFE

DC Current Gain (*)

BD240C

BD240

-

VCE=-4 V

IC=-1 A

BD240A

BD240B

15

-

-

BD240C

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC=-1 A

IB=-200 mA

BD240

BD240A

BD240B

-

- 0.6 V

BD240C

BD240

VBE(on)

Base-Emitter Voltage (*)

VCE=-4 V

IC=-1 A

BD240A

BD240B

-

- 1.3 V

BD240C

VCE=10 V

IC=0.2 A

f = 1KHz

hfe

Small Signal Current Gain

VCE=-10 V

IC=-0.2 A

f = 1MHz

BD240

BD240A

BD240B

20

-

-

BD240C

BD240

BD240A

BD240B

3

-

-

-

BD240C

fT

Transistor frequency

VCE=-10 V, IC=-0.2 A, f = 1MHz 3

-

- MHz

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

22/10/2012

COMSET SEMICONDUCTORS

2/3

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