BD246B データシートの表示（PDF） - SavantIC Semiconductor

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BD246B

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

BD250/A/B/C

DESCRIPTION

·With TO-3PN package

·Complement to type BD249/A/B/C

·125 W at 25°C case temperature

·25 A continuous collector current

PINNING

PIN

1

2

3

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Fig.1 simplified outline (TO-3PN) and symbol

Absolute maximum ratings(Ta= )

SYMBOL

PARAMETER

BD246

VCBO

Collector-base voltage

BD246A

BD246B

BD246C

BD246

VCEO

Collector-emitter voltage

BD246A

BD246B

BD246C

VEBO

Emitter-base voltage

IC

Collector current

ICM

Collector current-peak

IB

Base current

PC

Collector power dissipation

Tj

Junction temperature

Tstg

Storage temperature

CONDITIONS

Collector emitter

Open base

Open collector

TC=25

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c

Thermal resistance junction to case

VALUE

-55

-70

-90

-115

-45

-60

-80

-100

-5

-25

-40

-5

125

-65~150

-65~150

UNIT

V

V

V

A

A

A

W

VALUE

1

UNIT

/W

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