BD250A データシートの表示（PDF） - Power Innovations Ltd
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BD250A Datasheet PDF : 6 Pages
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BD250, BD250A, BD250B, BD250C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
BD250
-45
Collector-emitter
V(BR)CEO breakdown voltage
IC = -30 mA
(see Note 5)
IB = 0
BD250A
BD250B
BD250C
-60
-80
-100
VCE = -55 V
VBE = 0
BD250
-0.7
Collector-emitter
ICES cut-off current
VCE = -70 V
VCE = -90 V
VBE = 0
VBE = 0
BD250A
BD250B
-0.7
-0.7
VCE = -115 V
VBE = 0
BD250C
-0.7
ICEO
Collector cut-off
current
VCE = -30 V
VCE = -60 V
IB = 0
IB = 0
BD250/250A
BD250B/250C
-1
-1
Emitter cut-off
IEBO current
VEB = -5 V
IC = 0
-1
Forward current
hFE
transfer ratio
VCE = -4 V
VCE = -4 V
VCE = -4 V
IC = -1.5 A
IC = -15 A
IC = -25 A
25
(see Notes 5 and 6)
10
5
Collector-emitter
VCE(sat) saturation voltage
IB = -1.5 A
IB =
-5 A
IC = -15 A
IC = -25 A
(see Notes 5 and 6)
-1.8
-4
Base-emitter
VBE
voltage
VCE = -4 V
VCE = -4 V
IC = -15 A
IC = -25 A
(see Notes 5 and 6)
-2
-4
Small signal forward
hfe
current transfer ratio VCE = -10 V
IC = -1 A
f = 1 kHz
25
|hfe|
Small signal forward
current transfer ratio
VCE = -10 V
IC = -1 A
f = 1 MHz
3
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1 °C/W
42 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS †
ton
Turn-on time
toff
Turn-off time
IC = -5 A
VBE(off) = 5 V
IB(on) = -0.5 A
RL = 5 Ω
IB(off) = 0.5 A
tp = 20 µs, dc ≤ 2%
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
0.2
µs
0.4
µs
PRODUCT INFORMATION
2
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