BD3509MUV-E2(2009) データシートの表示（PDF） - ROHM Semiconductor

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BD3509MUV-E2
(Rev.:2009)

Ultra Low Dropout Linear Regulators for PC Chipsets

ROHM Semiconductor 

BD3508MUV, BD3509MUV

Technical Note

●Electrical Characteristics

(Unless otherwise specified, Ta=25℃ VCC=5V Ven=3V VIN=1.8V VDD=3.3V R1=3.9KΩ R2=3.3KΩ)

◎BD3508MUV

Parameter

Symbol

Min.

Limit

Typ.

Max.

Unit

Condition

Bias Current

ICC

-

0.7

1.4

mA

VCC Shutdown Mode Current

IST

-

0

10

uA Ven=0V

Output Voltage

Vo

-

1.200

-

V

Maximum Output Current

Io

3.0

-

-

A

Output Short Circuit Current

Iost

3.0

-

-

A

Vo=0V

Output Voltage Temperature

Coefficient

Tcvo

-

0.01

-

%/℃

Feedback Voltage 1

VFB1 0.643 0.650 0.657

V

Feedback Voltage 2

VFB2 0.630 0.650 0.670

V

Io=0 to 3A

Tj=-10 to 100℃ *7

Line Regulation 1

Reg.l1

-

0.1

0.5

%/V VCC=4.3V to 5.5V

Line Regulation 2

Reg.l2

-

0.1

0.5

%/V VIN=1.2V to 3.3V

Load Regulation

Reg.L

-

0.5

10

mV Io=0 to 3A

Minimum Input-Output Voltage

Differential

dVo

-

65

100

mV

Io=1A,VIN=1.2V

Tj=-10 to 100℃ *7

Standby Discharge Current

Iden

1

-

-

mA Ven=0V, Vo=1V

[ENABLE]

Enable Pin

Input Voltage High

Enhi

2

-

-

V

Enable Pin

Input Voltage Low

Enlow

-0.2

-

0.8

V

Enable Input Bias Current

Ien

-

7

10

uA Ven=3V

[FEEDBACK]

Feedback Pin Bias Current

IFB

-100

0

100

nA

[NRCS]

NRCS Charge Current

Inrcs

14

20

26

uA Vnrcs=0.5V

NRCS Standby Voltage

VSTB

-

0

50

mV Ven=0V

[UVLO]

VCC Under voltage Lock out

Threshold Voltage

VccUVLO 3.5

3.8

4.1

V

VCC:Sweep-up

VCC Under voltage Lock out

Hysteresis Voltage

Vcchys 100

160

220

mV VCC:Sweep-down

[AMP]

Gate Source Current

IGSO

-

1.6

-

mA VFB=0, VGATE=2.5V

Gate Sink Current

IGSI

-

4.7

-

mA VFB=VCC, VGATE=2.5V

*7 Design Guarantee

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○c 2009 ROHM Co., Ltd. All rights reserved.

3/20

2009.05 - Rev.A

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