BD3509MUV-E2 データシートの表示（PDF） - ROHM Semiconductor

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BD3509MUV-E2

Nch FET Ultra LDO for PC Chipsets with Power Good

ROHM Semiconductor 

BD3508MUV,BD3509MUV

Technical Note

●Electrical Characteristics

(Unless otherwise specified, Ta=25℃ VCC=5V Ven=3V VIN=1.5V VDD=3.3V R1=3.9KΩ R2=3.6KΩ)

◎BD3509MUV

Parameter

Limits

Symbol

Unit

Min.

Typ.

Max.

Conditions

Bias Current

ICC

-

1.1

2.0

mA

VCC Shutdown Mode Current

IST

-

0

10

µA Ven=0V

Output Voltage

Vo

-

1.25

-

V

Maximum Output Current

Output Voltage Temperature

Coefficient

Feedback Voltage 1

Feedback Voltage 2

Line Regulation 1

Io

Tcvo

VFB1

VFB2

Reg.l1

4.0

-

0.643

0.637

-

-

0.01

0.650

0.650

0.1

-

-

0.657

0.663

0.5

A

%/℃

V

V

Io=0 to 4A

Tj=-10 to 100℃ *7

%/V VCC=4.3V to 5.5V

Line Regulation 2

Reg.l2

-

0.1

0.5

%/V VIN=1.2V to 3.3V

Load Regulation

Minimum Input-Output Voltage

Differential

Standby Discharge Current

[ENABLE]

Enable Pin

Input Voltage High

Enable Pin

Input Voltage Low

Enable Input Bias Current

[FEEDBACK]

Feedback Pin Bias Current

[NRCS]

NRCS Charge Current

Reg.L

-

0.5

dVo

-

28

Iden

1

-

Enhi

2

-

Enlow

-0.2

-

Ien

-

7

IFB

-100

0

Inrcs

14

20

10

mV Io=0 to 4A

50

mV

Io=1A,VIN=1.25V

Tj=-10 to 100℃ *7

-

mA Ven=0V, Vo=1V

-

V

0.8

V

10

µA Ven=3V

100

nA

26

µA Vnrcs=0.5V

NRCS Standby Voltage

[UVLO]

VCC Under voltage Lock out

Threshold Voltage

VCC Under voltage Lock out

Hysteresis Voltage

[AMP]

Gate Source Current

Gate Sink Current

[PGOOD Block]

Threshold voltage

Ron

*7 Design Guarantee

VSTB

-

0

50

mV Ven=0V

VccUVLO 3.5

3.8

4.1

V VCC:Sweep-up

Vcchys 100

160

220

mV VCC:Sweep-down

IGSO

-

10

-

mA VFB=0, VGATE=2.5V

IGSI

-

18

-

mA VFB=VCC, VGATE=2.5V

VTHPG

RPG

-

0.585

-

-

0.1

-

V FB voltage

kΩ

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4/20

2010.04 - Rev.C

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