BD3508MUV データシートの表示（PDF） - ROHM Semiconductor

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BD3508MUV

Nch FET Ultra LDO for PC Chipsets with Power Good

ROHM Semiconductor 

BD3508MUV,BD3509MUV

●Reference Data

BD3508MUV

Vo

50mV/div

45mV

Vo

50mV/div

Io

3.0A

2A/div

Io

2A/div

64mV

3.0A

Technical Note

Vo

100mV/div

Io

2A/div

91mV

3A

Io=0A→3A/3µsec

t(5µsec/div)

Fig.1 Transient Response

(0→3A)

Co=150µF×2, CFB=0.01uF

Io=0A→3A/3µsec

t(5µsec/div)

Fig.2 Transient Response

(0→3A)

Co=150µF

Vo

50mV/div

55mV

Vo

50mV/div

79mV

Io

3.0A

2A/div

Io

2A/div 3.0A

Io=0A→3A/3µsec t(5µsec/div)

Fig.3 Transient Response

(0→3A)

Co=47µF, CFB=0.01uF

Vo

100mV/div

87mV

Io

2A/div

3A

Io=3A→0A/3µsec

t(5µsec/div)

Fig.4 Transient Response

(3→0A)

Co=150µF×2

Io=3A→0A/3µsec t(5µsec/div)

Fig.5 Transient Response

(3→0A)

Co=150µF

Ven

2V/div

Ven

2V/div

VNRCS

2V/div

Vo

1V/div

t(200µsec/div)

Fig.7: Waveform at output start

VNRCS

2V/div

Vo

1V/div

t(2msec/div)

Fig.8 Waveform at output OFF

Io=3A→0A/3µsec t(5µsec/div)

Fig.6 Transient Response

(3→0A)

Co=47µF

VCC

Ven

VIN

Vo

VCC→VIN→Ven

Fig.9 Input sequence

VCC

Ven

VIN

Vo

VIN→VCC→Ven

Fig.10 Input sequence

VCC

Ven

VIN

Vo

Ven→VCC→VIN

Fig.11 Input sequence

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VCC

Ven

VIN

Vo

VCC→Ven→VIN

Fig.12 Input sequence

2010.04 - Rev.C

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