BD675 データシートの表示（PDF） - Inchange Semiconductor
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BD675 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Darligton Power Transistors
Product Specification
BD675/BD677/BD679
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
BD675
BD677 IC=100mA; IB=0
BD679
V(BR)CBO
Collector-base
breakdown voltage
BD675
BD677 IC=1mA; IE=0
BD679
V(BR)EBO Emitter-base breakdown voltage
IE=5mA; IC=0
VCEsat Collector-emitter saturation voltage IC=1.5A; IB=30mA
VBE(on) Base-emitter on voltage
ICBO
Collector cut-off current
ICEO
Collector cut-off current
IC=1.5A ; VCE=3V
VCB=rated BVCBO; IE=0
Ta=100 ℃
VCE=1/2rated BVCEO; IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=1.5A ; VCE=3V
MIN TYP. MAX UNIT
45
60
V
80
45
60
V
80
5
V
2.5
V
2.5
V
0.2
2.0
mA
0.5
mA
5.0
mA
750
2
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