BF550 データシートの表示（PDF） - Philips Electronics
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BF550 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP medium frequency transistor
Product specification
BF550
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
collector cut-off current IE = 0; VCB = −30 V
IEBO
emitter cut-off current
IC = 0; VEB = −3 V
hFE
DC current gain
IC = −1 mA; VCE = −10 V
VBE
base-emitter voltage
IC = −1 mA; VCE = −10 V
Cre
feedback capacitance
IC = −1 mA; VCB = −10 V; f = 1 MHz
fT
transition frequency
IC = −1 mA; VCE = −10 V; f = 100 MHz
MIN.
−
−
50
−
−
−
TYP.
−
−
−
750
0.5
325
MAX. UNIT
−50
−100
−
−
−
−
nA
nA
mV
pF
MHz
1999 Apr 15
3
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