BF991,215 データシートの表示（PDF） - NXP Semiconductors.
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BF991,215 Datasheet PDF : 7 Pages
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NXP Semiconductors
N-channel dual-gate MOS-FET
Product specification
BF991
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IG1-SS
IG2-SS
IDSS
V(BR)G1-SS
V(BR)G2-SS
V(P)G1-S
V(P)G2-S
gate 1 cut-off current
gate 2 cut-off current
drain current
gate 1-source breakdown voltage
gate 2-source breakdown voltage
gate 1-source cut-off voltage
gate 2-source cut-off voltage
VG1-S = 5 V; VG2-S = VDS = 0
VG2-S = 5 V; VG1-S = VDS = 0
VDS = 10 V; VG1-S = 0; VG2-S = 4 V
IG1-SS = 10 mA; VG2-S = VDS = 0
IG2-SS = 10 mA; VG1-S = VDS = 0
ID = 20 µA; VDS = 10 V; VG2-S = 4 V
ID = 20 µA; VDS = 10 V; VG1-S = 0
MIN.
−
−
4
6
6
−
−
MAX. UNIT
50
nA
50
nA
25
mA
20
V
20
V
−2.5 V
−2.5 V
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): ID = 10 mA; VDS = 10 V; VG2-S = 4 V; Tamb = 25 °C.
SYMBOL
Yfs
Cig1-s
Cig2-s
Crs
Cos
F
PARAMETER
transfer admittance
input capacitance at gate 1
input capacitance at gate 2
feedback capacitance
output capacitance
noise figure
Gtr
transducer gain; note 1
CONDITIONS
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 100 MHz; GS = 1 mS; BS = BSopt
f = 200 MHz; GS = 2 mS; BS = BSopt
f = 100 MHz; GS = 1 mS; BS = BSopt;
GL = 0.5 mS; BL = BLopt
f = 200 MHz; GS = 2 mS; BS = BSopt;
GL = 0.5 mS; BL = BLopt
MIN.
10
−
−
−
−
−
−
−
TYP.
14
2.1
1
20
1.1
0.7
1
29
MAX.
−
−
−
−
−
1.7
2
−
UNIT
mS
pF
pF
fF
pF
dB
dB
dB
−
26
−
dB
Note
1. Crystal mounted in a SOT103 package.
Rev. 03 - 20 November 2007
4 of 7
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