BS107 データシートの表示（PDF） - Temic Semiconductors
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BS107 Datasheet PDF : 4 Pages
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VN2010L/BS107
Siliconix
Specificationsa
Parameter
Static
DrainĆSource Breakdown Voltage
GateĆThreshold Voltage
GateĆBody Leakage
Drain Leakage Current
Zero Gate Voltage Drain Current
OnĆState Drain Currentc
DrainĆSource OnĆResistancec
Forward Transconductancec
Common Source
Output Conductancec
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingd
TurnĆOn Time
TurnĆOff Time
Symbol
Test Conditions
Typb
Limits
VN2010L
BS107
Min Max Min Max
Unit
V(BR)DSS
VGS(th)
IGSS
IDSX
IDSS
ID(on)
rDS(on)
gfs
gos
VGS = 0 V, ID = 100 mA
VDS = VGS, ID = 1 mA
220 200
200
V
1.2 0.8 1.8 0.8
3
VDS = 0 V, VGS = "20 V
VDS = 0 V, VGS = "15 V
"10
nA
"10
VDS = 70 V, VGS = 0.2 V
1
VDS = 130 V, VGS = 0 V
VDS = 160 V, VGS = 0 V
0.03
mA
1
TJ = 125_C
100
VDS = 10 V, VGS = 10 V
0.7 0.1
A
VGS = 2.8 V, ID = 0.02 A
6
28
VGS = 4.5 V, ID = 0.05 A
6
10
W
TJ = 125_C 11
20
VDS = 15 V, ID = 0.1 A
180 125
mS
VDS = 15 V, ID = 0.05 A
0.15
Ciss
35
60
Coss
VDS =25 V, VGS = 0 V, f = 1 MHz 9
30
pF
Crss
1
15
tON
VDD = 25 V, RL = 250 W
5
20
ID ^ 0.1 A, VGEN = 10 V
ns
tOFF
RG = 25 W
21
30
Notes
a. TA = 25_C unless otherwise noted.
b. For DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW v300 ms duty cycle v2%.
d. Switching time is essentially independent of operating temperature.
VNDQ20
2
P-38283—Rev. B (08/15/94)
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