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BSM10GD60DN2 データシートの表示(PDF) - Siemens AG
部品番号
コンポーネント説明
メーカー
BSM10GD60DN2
IGBT Power Module
Siemens AG
BSM10GD60DN2 Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
BSM 10 GD 60 DN2
Power dissipation
P
tot
=
ƒ
(
T
C
)
parameter:
T
j
≤
150 °C
36
W
P
tot
28
24
Safe operating area
I
C
=
ƒ
(
V
CE
)
parameter:
D
= 0
, T
C
= 25°C ,
T
j
≤
150 °C
10
2
A
I
C
10
1
t
p
= 18.0µs
100 µs
20
10
0
16
1 ms
12
8
4
0
0
20 40 60 80 100 °C 130
T
C
10
-1
10
-2
10
0
10
1
10 ms
DC
10
2
V 10
3
V
CE
Collector current
I
C
=
ƒ
(
T
C
)
parameter:
V
GE
≥
15 V ,
T
j
≤
150 °C
12
A
10
I
C
9
8
7
6
5
4
3
2
1
0
0 20 40 60 80 100 120 °C 160
T
C
Transient thermal impedance
Z
th JC
=
ƒ
(
t
p
)
parameter:
D = t
p
/
T
IGBT
10
1
K/W
Z
thJC
10
0
10
-1
10
-2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
s 10
0
Semiconductor Group
4
Jan-09-1997
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