BSM 10 GD 60 DN2
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
20
A
17V
IC
16
15V
13V
11V
14
9V
7V
12
10
8
6
4
2
0
0
1
2
3
V
5
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
20
A
IC
16
14
12
10
8
6
4
2
0
0
2
4
6
8 10 V 14
VGE
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 125 °C
20
A
17V
IC
16
15V
13V
11V
14
9V
7V
12
10
8
6
4
2
0
0
1
2
3
V
5
VCE
Semiconductor Group
5
Jan-09-1997