BSM 150 GB 120 DN2
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 5.6 Ω
10 4
ns
t
10 3
tdoff
tdon
tr
10 2
tf
Typ. switching time
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, IC = 150 A
10 4
ns
t
tdoff
10 3
tdon
tr
10 2
tf
10 1
0
50 100 150 200 250 300 A 400
IC
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 5.6 Ω
120
10 1
0
10
20
30
40
Ω
60
RG
Typ. switching losses
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600V, VGE = ± 15 V, IC = 150 A
120
mWs
E
Eon
mWs
E
80
80
Eon
60
60
40
Eoff
20
0
0 50 100 150 200 250 300 A 400
IC
7
40
Eoff
20
0
0
10
20
30
40
Ω
60
RG
Oct-21-1997