BSM 400 GA 120 DL
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 2.2 Ω
10 4
ns
t
10 3
10 2
tdoff
tr
tdon
tf
Typ. switching time
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, IC = 400 A
10 4
ns
t
10 3
10 2
tdoff
tdon
tr
tf
10 1
0 100 200 300 400 500 600 700 A 900
IC
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 2.2 Ω
250
10 1
0
5
10
15
20
Ω
30
RG
Typ. switching losses
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600V, VGE = ± 15 V, IC = 400 A
250
E mWs
Eon
E mWs
150
150
Eoff
Eon
Eoff
100
100
50
0
0 100 200 300 400 500 600 700 A 900
IC
Semiconductor Group
7
50
0
0
5
10
15
20
Ω
30
RG
Feb-14-1997