BSR14 データシートの表示（PDF） - Fairchild Semiconductor
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BSR14 Datasheet PDF : 3 Pages
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Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
ICEX
Collector-Cutoff Current
IBEX
Reverse Base Current
IEBO
Emitter-Cutoff Current
ON CHARACTERISTICS
IC = 10A, IB = 0
IC = 10A, IE = 0
IE = 10A, IC = 0
VCB = 60V,
VCB = 60V, Ta = 150°C
VCE = 60V, VEB = 3.0V
VCE = 60V, VEB = 3.0V
VEB = 3.0V, IC = 0
hFE
DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
IC = 0.1mA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 150mA, VCE = 1.0V
IC = 500mA, VCE = 10V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
fT
Current Gain - Bandwidth Product
IC = 20mA, VCE = 20V,
f = 100mHz
CCB
Collector-Base Capacitance
VCB = 10V, IE = 0,
f = 1.0MHz
hie
Input Impedance
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
hfe
Small-Signal Current Gain
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
hoe
Output Admittance
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
SWITCHING CHARACTERISTICS
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
VCC = 30V, VBE(OFF) =
0.5V, IC = 150mA,
IB1 = 15mA
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Min.
40
75
6.0
35
50
75
100
50
40
0.6
300
2.0
50
5
Max.
10
10
10
20
15
Units
V
V
V
nA
A
nA
nA
nA
300
0.3
V
1.0
V
1.2
V
2.0
V
MHz
8.0
pF
8.0
k
300
35
S
10
ns
25
ns
225
ns
60
ns
Spice Model
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7
Xtf=3 Rb=10)
© 2012 Fairchild Semiconductor Corporation
BSR14 Rev. B0
2
www.fairchildsemi.com
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