BSS138BKW データシートの表示（PDF） - Philips Electronics
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BSS138BKW Datasheet PDF : 16 Pages
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NXP Semiconductors
BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
10
VGS
(V)
8
aaa-000166
6
4
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
QG (nC)
ID = 0.3 A; VDS = 30 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
0.4
IS
(A)
0.3
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig 15. Gate charge waveform definitions
aaa-000167
(1)
(2)
0.2
0.1
0
0
0.4
0.8
1.2
VSD (V)
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
BSS138BKW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 August 2011
© NXP B.V. 2011. All rights reserved.
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