Q67000-S506 データシートの表示（PDF） - Siemens AG
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Q67000-S506 Datasheet PDF : 8 Pages
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BSS 87
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
Tj
Tstg
RthJA
Values
Unit
-55 ... + 150 °C
-55 ... + 150
≤ 125
K/W
E
55 / 150 / 56
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
Unit
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V(BR)DSS
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
240
-
Gate threshold voltage
VGS(th)
VGS=VDS, ID = 1 mA
0.8
1.5
Zero gate voltage drain current
IDSS
VDS = 240 V, VGS = 0 V, Tj = 25 °C
-
0.1
VDS = 240 V, VGS = 0 V, Tj = 125 °C
-
10
VDS = 60 V, VGS = 0 V, Tj = 25 °C
-
-
Gate-source leakage current
IGSS
VGS = 20 V, VDS = 0 V
-
1
Drain-Source on-state resistance
RDS(on)
VGS = 10 V, ID = 0.29 A
-
3
VGS = 4.5 V, ID = 0.29 A
-
4
V
-
2
µA
1
100
0.2
nA
10
Ω
6
10
Semiconductor Group
2
Sep-18-1996
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