BTS 140A
Drain-source on-state resistance
RDS(on) = f (Tj)
Parameter: ID = 32 A, VGS = 10 V (spread)
Gate threshold voltage VGS(th) = f (Tj)
Parameter: VDS = VGS, ID = 1 mA
Typ. transfer characteristic
ID = f (VGS)
Parameter: tp = 80 µs, VDS = 25 V
Typ. transconductance gfs = f (ID)
Parameter: tp = 80 µs, VDS = 25 V
Semiconductor Group
6