Q67060-S6953A3 データシートの表示（PDF） - Infineon Technologies
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Q67060-S6953A3 Datasheet PDF : 16 Pages
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Data Sheet BTS555
Input circuit (ESD protection)
Short circuit detection
V bb
Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC)
(80 ...300 µs).
V
ZD
Z,IN
V bIN
IN
IIN
R bb
V IN
When the device is switched off (IIN = 0) the voltage
between IN and GND reaches almost Vbb. Use a
mechanical switch, a bipolar or MOS transistor with
appropriate breakdown voltage as driver.
VZ,IN = 66 V (typ).
Logic
unit
Short circuit
detection
+ Vbb
VON
OUT
Inductive and overvoltage output clamp
+ Vbb
VZ1
VON
Current sense status output
Vbb
R bb
ZD
V
Z,IS
VZG
IS
DS
OUT
PROFET
VOUT
IS
IIS
VIS
R
IS
VZ,IS = 66 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n
devices are connected in parallel). IS = IL/kilis can be
only driven by the internal circuit as long as Vout - VIS >
5V. If you want to measure load currents up to IL(M),
RIS should be less than V bb − 5V .
I L ( M ) / K ilis
Note: For large values of RIS the voltage VIS can reach
almost Vbb. See also overvoltage protection.
If you don't use the current sense output in your
application, you can leave it open.
VON is clamped to VON(Cl) = 42 V typ. At inductive load
switch-off without DS, VOUT is clamped to VOUT(CL) =
-17 V typ. via VZG. With DS, VOUT is clamped to Vbb -
VON(CL) via VZ1. Using DS gives faster deenergizing of
the inductive load, but higher peak power dissipation in
the PROFET. In case of a floating ground with a
potential higher than 19V referring to the OUT –
potential the device will switch on, if diode DS is not
used.
Overvoltage protection of logic part
+ Vbb
R IN
IN
V Z,IN
V
Z,IS
R bb
Logic
VOUT
IS
PROFET
Infineon Technologies AG
R IS
RV
V Z,VIS
Signal GND
Rbb = 120 Ω typ., VZ,IN = VZ,IS = 66 V typ., RIS = 1 kΩ
nominal. Note that when overvoltage exceeds 71 V typ.
a voltage above 5V can occur between IS and GND, if
RV, VZ,VIS are not used.
8
2003-Oct-01
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