BUV23 データシートの表示（PDF） - Comset Semiconductors
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BUV23 Datasheet PDF : 2 Pages
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NPN BUV23
POWER SWITCH APPLICATIONS
The BUV23 is silicon multiepitaxial mesa NPN transistors in Jedec TO-3.
They are intended for use in power switching appications in military and industrial equipments.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCBO
VEBO
VCEX
VCER
IC
ICM
IB
Pt
TJ
TStg
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
THERMAL CHARACTERISTICS
Symbol
RthJC
Ratings
Thermal Resistance, Junction to Case
IB = 0
IE = 0
IC = 0
VBE = -1.5V
RBE <= 100 Ω
tp = 10ms
@ TC = 25°
Value
325
400
7.0
400
390
30
40
6
250
200
-65 to +200
Unit
V
V
V
V
V
A
A
A
Watts
°C
°C
Value
0.7
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO(SUS)
VEB0(SUS)
ICEO
ICEX
Ratings
Collector-Emitter
Sustaining Voltage (1)
Emitter-BaseBreakdown
Voltage (1)
Collector Cutoff Current
Collector Cutoff Current
Test Condition(s)
IC=200 mA, L= 25mH
IC=0A , IE=50 mA
VCE=260 V , IB=0A
VCE= VCEX , VBE= -1.5V
VCE= VCEX , VBE= -1.5V, Tcase = 125°C
COMSET SEMICONDUCTORS
Min Typ Mx Unit
325 - -
V
7- -
V
- - 3 mA
-
-
-
-
3
12
mA
1/2
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