BUV23 データシートの表示（PDF） - Comset Semiconductors
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BUV23 Datasheet PDF : 2 Pages
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NPN BUV23
IEBO
hFE
VCE(SAT)
VBE(SAT)
Emitter Cutoff Current
DC Current Gain (1)
Collector-Emitter
saturation Voltage (1)
Base-Emitter saturation
Voltage (1)
VEB=5.0 V, IC=0
IC=8 A , VCE=4.0 V
IC=16 A , VCE=4.0 V
IC=8 A , IB=1.6 A
IC=16 A , IB=3.2 A
IC=16 A , IB=3.2 A
Symbol
fT
ton
Ratings
Transition frequency
Turn-on time
ts
Storage time
tf
File time
Test Condition(s)
VCE=15 V , IC=2 A , f=10 MHz
IC=16 A , IB=3.2 A
IC=16 A
IB1 = -IB2 =3.2 A
(1) Pulse Duration = 300 µs, Duty Cycle <= 2%
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm
inches
A
25,51 1,004
B
38,93
1,53
C
30,12
1,18
D
17,25
0,68
E
10,89
0,43
G
11,62
0,46
H
8,54
0,34
L
1,55
0,6
M
19,47
0,77
N
1
0,04
P
4,06
0,16
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
- - 1 mA
15 - 60
8- -
-
- 0.2 0.8
- 0.35 1
V
- 1.15 1.5
Min Typ Mx Unit
8- -
MHz
- 0.55 1.3
- 1.7 2.5
µs
- 0.26 1.2
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
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