BUV48A データシートの表示（PDF） - Tiger Electronic
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BUV48A Datasheet PDF : 1 Pages
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TIGER ELECTRONIC CO.,LTD
NPN Silicon High Power Ttransistors
Product specification
BUV48A
DESCRIPTION
The BUV48A transistors are designed for high-voltage, high-speed, power
switching in inductive circuits where fall time is critical. They are particularly suited for
line-operated switchmode applications such as:
◆ Switching Regulators
◆ Inverters
◆ Solenoid and Relay Drivers
◆ Motor Controls
◆ Deflection Circuits
ABSOLUTE MAXIMUM RATINGS ( Ta = 25℃ )
Parameter
Symbol Value Unit
Collector-Base Voltage
VCBO
1000 V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
VCEO
VEBO
IC
IB
Ptot
Tj
Tstg
450 V
7.0 V
15 A
5.0 A
150 W
150 ℃
-55~150 ℃
TO-3PN
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ )
Parameter
Symbol Test Conditions
Collector Cut-off Current
ICES VCE=1000V, IE=0
Emitter Cut-off Current
IEBO VEB=5.0V, IC=0
Collector-Emitter Sustaining Voltage
DC Current Gain
VCEO
hFE
IC=100mA, IB=0
VCE=5V, IC=8.0A
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
IC=8.0A,IB=1.6A
IC=12A,IB=2.4A
IC=8.0A,IB=1.6A
Storage Time
TS VCC=300V, Tp = 30 us
Min.
—
—
450
8
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—
Typ.
—
—
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—
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Max. Unit
0.5 mA
0.1 mA
—
V
—
1.5
V
5.0
1.6 V
2.0 us
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