BZT55C8V2 データシートの表示（PDF） - TY Semiconductor
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BZT55C8V2 Datasheet PDF : 3 Pages
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Typical Characteristics
600
500
400
300
200
100
0
0
40
80
120 160 200
Tamb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
1000
Tj = 25°C
100
IZ=5mA
10
1
0
5
10
15
20
25
VZ – Z-Voltage ( V )
Figure 3. Typical Change of Working Voltage under Oper-
ating Conditions at Tamb=25°C
Product specification
BZT55C8V2
1.3
VZtn=VZt/VZ(25°C)
1.2
TKVZ=10 10–4/K
8 10–4/K
6 10–4/K
1.1
4 10–4/K
2 10–4/K
1.0
0
–2 10–4/K
–4 10–4/K
0.9
0.8
–60 0
60
120 180 240
Tj – Junction Temperature ( °C )
Figure 2. Typical Change of Working Voltage vs.
Junction Temperature
15
10
5
IZ=5mA
0
–5
0
10
20 30
40
50
VZ – Z-Voltage ( V )
Figure 4. Temperature Coefficient of Vz vs.
Z–Voltage
200
150
VR = 2V
Tj = 25°C
100
50
0
0
5
10
15
20
25
VZ – Z-Voltage ( V )
Figure 5. Diode Capacitance vs. Z–Voltage
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