BZV80 データシートの表示（PDF） - Philips Electronics
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BZV80 Datasheet PDF : 4 Pages
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Philips Semiconductors
Voltage reference diodes
Product specification
BZV80; BZV81
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Vref
∆Vref
reference voltage
reference voltage excursion
BZV80
BZV81
SZ
temperature coefficient
BZV80
BZV81
rdif
differential resistance
CONDITIONS
IZ = 7.5 mA
IZ = 7.5 mA; test points for
Tamb: −20; +25; +55; +80 °C;
notes 1 and 2
IZ = 7.5 mA: notes 1 and 2
IZ = 7.5 mA
MIN.
5.89
−
−
−
−
−
NOM.
6.20
MAX. UNIT
6.51 V
−
62
mV
−
31
mV
−
0.01 %/K
0.005 %/K
−
15
Ω
Notes
1. The quoted values of ∆Vref are based on a constant current IZ. Two factors can cause ∆Vref to change with IZ, namely
the differential resistance rdif and the temperature coefficient SZ.
a) Each change of IZ can result in a maximum change of ∆Vref as follows: ∆Vref (mV) = ∆IZ (mA) × 15 Ω
taking into account that rdif is max. 15 Ω.
b) The temperature coefficient of the reference voltage SZ is also a function of IZ. However, for these reference
diodes SZ varies max. ±0.05 mV/K or ±0.001%/K when IZ is between 6 and 10 mA, so this effect can be neglected
in practice for these types.
2. The temperature coefficient of the reference voltage is obtained from the following formula:
SZ = T----Va---m-r--e-b--f-21----––-----VT----ar--e-m--f-2-b---1 × V-----r-1-e--0f---n0---o--m-- %/K
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
Note
1. Device mounted on a FR4 printed-circuit board.
VALUE
300
380
UNIT
K/W
K/W
1996 Mar 21
3
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