BZX79B43 データシートの表示（PDF） - Shenzhen Ping Sheng Electronics Co., Ltd.
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BZX79B43 Datasheet PDF : 2 Pages
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Silicon Epitaxial Planar Z–Diodes
Features
D Very sharp reverse characteristic
D Low reverse current level
D Low noise
D Very high stability
D Available with tighter tolerances
D VZ–tolerance ± 2%
Applications
Voltage stabilization
BZX55B...
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Power dissipation
Z–current
l=4mm, TL=25°C
Junction temperature
Storage temperature range
Type
Symbol Value Unit
PV
500
mW
IZ
PV/VZ
mA
Tj
175
°C
Tstg –65...+175 °C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient
l=4mm, TL=constant
Symbol
Value
Unit
RthJA
300
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Forward voltage
IF=100mA
Type
Symbol Min Typ Max Unit
VF
1.5 V
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