CDSC706-0504F データシートの表示（PDF） - Bourns, Inc
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CDSC706-0504F Datasheet PDF : 4 Pages
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*RoHS COMPLIANT
Features
■ RoHS Compliant*
■ Low capacitance - 1.9 pF
■ ESD protection >40k V
■ Surge protection
Applications
■ Personal Digital Assistants (PDAs)
■ Mobile phones & accessories
■ Memory card protection
■ SIM card port protection
■ Portable electronics
■ Ethernet
CDSC706-0504F – Surface Mount TVS Diode Array
General Information
The CDSC706-0504F device provides ESD, EFT and Surge protection for high speed
data ports meeting IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 61000-4-5
(Surge) requirements. The Transient Voltage Suppressor array, protecting up to 4 data
lines, offers a Working Peak Reverse Voltage of 5 V and Minimum Breakdown
Voltage of 6 V.
The SC70-6L packaged device will mount directly onto the industry standard SC70-6
footprint. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with
standard pick and place equipment and the flat configuration minimizes roll away.
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Peak Pulse Power (tp = 8/20 µs)1
Peak Pulse Current (tp = 8/20 µs)
Storage Temperature
Operating Temperature
Note:
1. See Peak Pulse Power vs. Pulse Time.
Symbol
PPK
IPPM
TSTG
TOPR
I/O 4
REF
6
5
1
2
I/O 1
GND
Value
200
6
-55 to +150
-55 to +150
I/O 3
4
3
I/O 2
Unit
W
A
°C
°C
Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
Value
Unit
Minimum Breakdown Voltage @ 1 mA
VBR
6
V
Maximum Working Peak Voltage
VWM
5
V
Maximum Leakage Current @ VWM
ID
3
µA
Maximum Clamping Voltage @ IP = 1 A
VC
15
V
Maximum Clamping Voltage @ IP = 5 A
VC
25
V
Typical Junction Capacitance @ 0 V 1 MHz
CD
1.9
pF
Maximum Junction Capacitance @ 0 V 1 MHz
CD
3
pF
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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