CFY30 データシートの表示（PDF） - Siemens AG

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CFY30

GaAs FET

Siemens AG 

GaAs FET

CFY 30

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Datasheet

* Low noise ( Fmin = 1.4 dB @ 4 GHz )

* High gain ( 11.5 dB typ. @ 4 GHz )

* For oscillators up to 12 GHz

* For amplifiers up to 6 GHz

* Ion implanted planar structure

* Chip all gold metallization

* Chip nitride passivation

ESD: Electrostatic discharge sensitive device,

observe handling precautions!

Type

CFY 30

Marking

Ordering code Pin Configuration

(tape and reel) 1 2 3 4

A2 Q62703-F97 S D S G

Package 1)

SOT-143

Maximum ratings

Drain-source voltage

Drain-gate voltage

Gate-source voltage

Drain current

Channel temperature

Storage temperature range

Total power dissipation (TS < 70°C) 2)

Thermal resistance

Channel-soldering point 2)

Symbol

VDS

VDG

VGS

ID

TCh

Tstg

Ptot

RthChS

Value

5

7

-4 ... +0.5

80

150

-40...+150

250

<320

Unit

V

V

V

mA

°C

°C

mW

K/W

1) Dimensions see chapter Package Outlines

2) TS is measured on the source 1 lead at the soldering point to the PCB.

Siemens Aktiengesellschaft

pg. 1/6

11.01.1996

HL EH PD 21

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