CY7C1219F データシートの表示（PDF） - Cypress Semiconductor
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CY7C1219F Datasheet PDF : 15 Pages
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CY7C1219F
Maximum Ratings
Current into Outputs (LOW)......................................... 20 mA
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................... –65°C to +150°
Static Discharge Voltage........................................... > 2001V
(per MIL-STD-883,Method 3015)
Latch -up Current.................................................... > 200 mA
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on VDD Relative to GND........ –0.5V to +4.6V
DC Voltage Applied to Outputs
in three-state ........................................ –0.5V to VDDQ +0.5V
DC Input Voltage......................................–0.5V to VDD+0.5V
Operating Range
Range
Com’l
Ambient
Temperature (TA)
VDD
0°C to +70°C 3.3V −5%/+10%
VDDQ
3.3V −5%
to VDD
Electrical Characteristics Over the Operating Range[7, 8]
Parameter
Description
VDD
VDDQ
VOH
VOL
VIH
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage[7]
Test Conditions
VDDQ = 3.3V, VDD = Min., IOH = –4.0 mA
VDDQ = 3.3V, VDD = Min., IOL = 8.0 mA
VDDQ = 3.3V
Min.
3.135
3.135
2.4
2.0
VIL
Input LOW Voltage[7]
VDDQ = 3.3V
IX
Input Load Current except ZZ GND ≤ VI ≤ VDDQ
and MODE
–0.3
–5
Input Current of MODE
Input = VSS
–30
Input = VDD
Input Current of ZZ
Input = VSS
–5
Input = VDD
IOZ
Output Leakage Current
GND ≤ VI ≤ VDDQ, Output Disabled
–5
IDD
VDD Operating Supply Current VDD = Max., IOUT = 0 mA,
6-ns cycle, 166 MHz
f = fMAX = 1/tCYC
7.5-ns cycle, 133 MHz
ISB1
Automatic CE
Power-down
Current—TTL Inputs
VDD = Max., Device Deselected, 6-ns cycle, 166 MHz
VIN ≥ VIH or VIN ≤ VIL, f = fMAX =
1/tCYC
7.5-ns cycle, 133 MHz
ISB2
Automatic CE
VDD = Max., Device Deselected, All speeds
Power-down
VIN ≤ 0.3V or VIN > VDDQ – 0.3V,
Current—CMOS Inputs
f=0
ISB3
Automatic CE
VDD = Max., Device Deselected, 6-ns cycle, 166 MHz
Power-down
Current—CMOS Inputs
or VIN ≤ 0.3V or VIN > VDDQ –
0.3V, f = fMAX = 1/tCYC
7.5-ns cycle, 133 MHz
ISB4
Automatic CE Power-down VDD = Max., Device Deselected, All speeds
Current—TTL Inputs
VIN ≥ VIH or VIN ≤ VIL, f = 0
Max.
3.6
VDD
0.4
VDD +
0.3V
0.8
5
5
30
5
240
225
100
90
40
85
75
45
Unit
V
V
V
V
V
V
µA
µA
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
mA
Thermal Characteristics[9]
Parameter
ΘJA
ΘJC
Description
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to case)
Test Conditions
Test conditions follow standard test methods and procedures
for measuring thermal impedance, per EIA/JESD51
Notes:
7. Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC)> –2V (Pulse width less than tCYC/2).
8. Power-up: Assumes a linear ramp from 0v to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
TQFP
Package
41.83
9.99
Unit
°C/W
°C/W
Document #: 38-05416 Rev. *A
Page 8 of 15
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