MMFT108T1 データシートの表示（PDF） - Motorola => Freescale

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MMFT108T1

TMOS FET TRANSISTOR N-CHANNEL - ENHANCEMENT

Motorola => Freescale 

MMFT108T1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0, ID = 10 mA)

Zero Gate Voltage Drain Current

(VDS = 130 V, VGS = 0)

Gate–Body Leakage Current — Reverse

(VGS = 15 Vdc, VDS = 0)

ON CHARACTERISTICS (2)

Gate Threshold Voltage

(ID = 1.0 mAdc, VDS = VGS)

Static Drain–to–Source On–Resistance

(VGS = 2.0 Vdc, ID = 50 mA)

(VGS = 2.8 Vdc, ID = 100 mA)

Drain Cutoff Current

(VGS = 0.2 V, VDS = 70 V)

V(BR)DSS

200

—

IDSS

—

—

IGSS

—

—

Vdc

—

nAdc

30

nAdc

10

VGS(th)

Vdc

0.5

—

1.5

rDS(on)

Ohms

—

—

10

—

—

8.0

IDSX

mA

—

—

25

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VDS = 25 V, VGS = 0,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS

Turn–On Time (See Figure 1)

Turn–Off Time (See Figure 1)

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle = 2.0%.

Ciss

Coss

Crss

ton

toff

—

—

150

pF

—

—

30

—

—

10

—

—

15

ns

—

—

15

ns

RESISTIVE SWITCHING

PULSE GENERATOR

50

+25 V

Vin

40 pF

23

20 dB

50 Ω ATTENUATOR

50 1.0 M

Figure 1. Switching Test Circuit

TO SAMPLING SCOPE

50 Ω INPUT

Vout

ton

90%

toff

90%

OUTPUT

INVERTED Vout

INPUT

10 V

Vin

50%

10%

10%

90%

PULSE 50%

WIDTH

Figure 2. Switching Waveforms

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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