DRF100 データシートの表示（PDF） - Microsemi Corporation

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DRF100

MOSFET Driver Hybrid

Microsemi Corporation 

Output Characteristics

Symbol

Parameter

Cout

Output Capacitance

Rout

Output Resistance

Lout

Output Inductance

FMAX

Operating Frequency CL=3000nF + 50Ω

FMAX

Operating Frequency RL=50Ω

Dynamic Characteristics

Symbol

Parameter

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Thermal Characteristics

Symbol

Parameter

RθJC

Thermal Resistance Junction to Case

RθJHS

Thermal Resistance Junction to Heat Sink

TJSTG

Storage Temperature

PD

Maximum Power Dissipation @ TSINK = 25°C

PDC

Total Power Dissipation @ TC = 25°C

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

DRF100

Min

Typ

Max

Unit

2500

pF

1

Ω

2

3

4

nH

30

MHz

50

Min

Typ

Max

Unit

2000

165

pF

75

Ratings

1.44

2.53

-55 to 150

60

100

Unit

°C/W

°C

W

Figure 1, DRF100 Simplified Circuit Diagram

The Simplified DRF100 Circuit Diagram is illustrated above. By including the driver high speed by-pass capacitor (C Internal), the contribution

to the internal parasitic loop inductance of the driver output is greatly reduced. This low parasitic approach, coupled with the Schmitt trig-

ger input (pin 4), Kelvin signal ground (pin 5) and the Anti-Ring Function, provide improved stability and control. The IN pin (4) is applied to

a Schmitt Trigger. The signal is then applied to the intermediate drivers and level shifters; this section contains proprietary circuitry designed

specifically for ring abatement. The P channel and N channel power drivers provide the high current to the OUTPUT (pin 9.)

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