DS1249W データシートの表示（PDF） - Maxim Integrated

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DS1249W

3.3V 2048kb Nonvolatile SRAM

Maxim Integrated 

19-5633; Rev 11/10

www.maxim-ic.com

FEATURES

 10 years minimum data retention in the

absence of external power

 Data is automatically protected during power

loss

 Unlimited write cycles

 Low-power CMOS operation

 Read and write access times of 100ns

 Lithium energy source is electrically

disconnected to retain freshness until power is

applied for the first time

 Optional industrial (IND) temperature range

of -40°C to +85°C

 JEDEC standard 32-pin DIP package

DS1249W

3.3V 2048kb Nonvolatile SRAM

PIN ASSIGNMENT

NC 1

A16 2

A14 3

A12 4

A7 5

A6 6

A5 7

A4 8

A3 9

A2 10

A1 11

A0 12

DQ0 13

DQ1 14

DQ2 15

GND 16

32

VCC

31 A15

30 A17

29 WE

28 A13

27 A8

26 A9

25 A11

24

OE

23 A10

22

CE

21

DQ7

20

DQ6

19

DQ5

18 DQ4

17 DQ3

32-Pin Encapsulated Package

740mil Extended

PIN DESCRIPTION

A0–A17

- Address Inputs

DQ0–DQ7

- Data In/Data Out

CE

- Chip Enable

WE

- Write Enable

OE

- Output Enable

VCC

GND

- Power (+3.3V)

- Ground

NC

- No Connect

DESCRIPTION

The DS1249W 2048kb nonvolatile (NV) SRAMs are 2,097,152-bit, fully static, NV SRAMs organized as

262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry

that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium

energy source is automatically switched on and write protection is unconditionally enabled to prevent

data corruption. There is no limit on the number of write cycles that can be executed, and no additional

support circuitry is required for microprocessor interfacing.

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