DTA114ECA データシートの表示（PDF） - Willas Electronic Corp.

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DTA114ECA

PNP Digital Transistor

Willas Electronic Corp. 

WILLAS

FM120-M+

DTA114ECA THRU

PNP Digital Transistor

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V

FM1200-M

SOD-123+ PACKAGE

Pb Free Produc

Features

Package outline

• Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

• Low profile surface mounted application in order to

SOD-123H

Featuresoptimize board space.

• Low power loss, high efficiency.

• Pb-F•reHeigphaccurkraengtecaispaabviliatyi,lalobwleforward voltage drop.

0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

RoHS• Hpirgohdsuucrgt efocrappaabciklitiyn.g code suffix ”G”

• Guardring for overvoltage protection.

Halog•eUnltrfareheighp-rsopdeuecdtsfwoirtcphaincgk. ing code suffix “H”

• Epoxy• SmileiceotnseUpiLta9x4ialVp-la0nfalar mchmipa, mbielittayl rsailtiicnogn junction.

• Moisu•rLeeSade-nfrseietivpiatyrtsLmeveeelt 1environmental standards of

• Built-inMbIiLa-sSrTeDs-i1s9to5r0s0e/2n2a8ble the configuration of an inverter circuit

witho•utRcooHnSnperocdtiuncgt foerxpteacrnkiangl icnopduetsrueffsixis"tGo"rs

• The biaHsalroegseinstfroerespcroodnuscitsftoor pf athckinin-gfilcmodreessuifsfitxo"rHs"with complete

isolatiMonetco halalonwinceaglatdivae tbaiasing of the input. They also have the

advan•tEagpoexoyf: aUlLm9o4s-Vt 0coramtepdlefltaemlyeerleimtairndaatnint g parasitic effects.

•

Odenvlyicte•hCedaeossneig/:onMffeocaldosenyddpitliaosntsic,nSeOedD-t1o2b3eH

set

for

operation,

making

,

• Terminals :Plated terminals, solderable per MIL-STD-750

0.031(0.8) Typ.

SOT-23

0.071(1.8)

.122(3.10) 0.056(1.4)

.106(2.70)

.080(2.04)

.070(1.78)

0.040(1.0)

0.024(0.6)

0.031(0.8) Typ.

Method 2026

Absolute

•

maximum ratings

Polarity : Indicated by

@ 25к

cathode band

Dimensions in inches and (millimeters)

Symbol

Parameter

VCC • MSoupupnltyinvgoltPaogesition : Any

Min Typ Max Unit

--- -50 ---

V

VIN • WInepiugthvto:ltAagpeproximated 0.011 gram -40 --- 10

V

IO

IC(MAX)

Output current

MAXIMUM

RATINGS

AND

E--L-ECT--1R5000ICAL--C- HARmAACTERISTICS

Pd

Power dissipation

--- 200 --- mW

RTaj tings aJt u2n5c℃tionamtebmiepnertatetumreperature unless otherw--is- e spe1c5i0fied. ---

ć

TSsitnggle phaSstoerahgaelf twemavpee,r6at0uHrez, resistive of inductive-5lo5ad. --- 150

ć

For capacitive load, derate current by 20%

Electrical CharacteRriAsTtIiNcGsS@ 25к

Marking Code

SyVMmI(aobfxf)oiml um RInepcuutrvreonlttaPgeea(kPVaRCrCea=vm-e5reVste,eIrVO=o-lt1a0g0e­A)

VMI(aonx)imum RMS Voltage(VO=-0.3V, IO=-10mA)

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH

12

13

14

15

16

-M0.iV5nRRM

Typ

---

20

Max

---

30UVnit

40

50

60

--V- RMS --- 14 -3.0 21 V 28

35

42

18 .008(0.1200)

80 .003(0.10080)

56

70

115 120

150

200

105

140

VMOa(oxn)imum DOCutBpulotcvkoinltgagV= eol(tIaOg/IeI -10mA/-0.5mA

IMOI(aoI fxf)im= um AOInvupeturpatugcteucruFrerornrewtn(atVr(dIVR-C5Ce= V=c-)t5if0ieVd,CVuI rr0e)nt

---VDC --- 20 -0.3 30 V 40

50

60

80

100

150

200

---

--- -0.88 mA

--- IO ---

-0.5 ­A

.004(0.10)MAX1. .0

PRGe1aI k ForwaDInrdCpSuctuurrgrereseinCsttuagrnraecinnet 8(V.3Om=-s5sV= in, gIOle h-5amlf sAin) e-wave

30

7.0IFSM

---

10

Rs2u/pRe1rimposRedesoinstraantecdeloraatdio(JEDEC method)

0.8 1.0

TfyTpical

Typical

TheTrrmanasl iRtioensisfrteanqcueen(Ncyote 2)

Jun(VctOio=n-1C0aVp,aIcOi=ta5nmcAe,(Nf=o1t0e01M) Hz)

--R- ΘJA 250

CJ

---

13

K¡

1.2

--- MHz

30

40 .020(0.50)

120 .012(0.30)

Operating Temperature Range

TJ

-55 to +125

-55 to +150

Storage Temperature Range

TSTG

Dim-e6n5sitoons+i1n7in5ches and (millimeters)

CHARACTERISTICS

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM16S0-uMgH gFMe1s8t0e-MdHSFMo1ld10e0r-MH FM1150-MH FM1200-MH

Maximum Forward Voltage at 1.0A DC MARKING: 14VF

0.50

0.70

Pad La0y.8o5ut

0.9

0.92

Maximum Average Reverse Current at @T A=25℃

IR

Rated DC Blocking Voltage

@T A=125℃

0..0531

1.0800

NOTES:

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

2- Thermal Resistance From Junction to Ambient

.035

.900

.079

2.000

inches

mm

2012-06

2012-0

.037

.950

.037

.950

WILLAS ELECTRONIC COR

WILLAS ELECTRONIC CORP.

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