EFA080A-70 データシートの表示（PDF） - Unspecified
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EFA080A-70 Datasheet PDF : 2 Pages
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Excelics
EFA080A-70
DATA SHEET
Low Distortion GaAs Power FET
• NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
• +23.5dBm TYPICAL OUTPUT POWER
• 7.0 dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
44
19
20
4
D
S
S
G
All Dimensions In mils.
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
P1dB
Output Power at 1dB Compression
Vds=5V, Ids=50% Idss
f=12GHz
f=18GHz
21.5 23.5
23.5
dBm
G1dB
Gain at 1dB Compression
Vds=5V, Ids=50% Idss
f=12GHz
f=18GHz
6.0 7.0
4.5
dB
PAE
Power Added Efficiency at 1dB Compression
Vds=5V, Ids=50% Idss
f=12GHz
%
30
Idss
Saturated Drain Current Vds=3V, Vgs=0V
130 210 300 mA
Gm
Transconductance
Vds=3V, Vgs=0V
90 120
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=2.0mA
-2.0 -3.5 V
BVgd
Drain Breakdown Voltage Igd=1.0mA
-10 -15
V
BVgs
Source Breakdown Voltage Igs=1.0mA
Rth
Thermal Resistance
* Overall Rth depends on case mounting.
-6 -14
135*
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS
ABSOLUTE1 CONTINUOUS2
Vds
Drain-Source Voltage
8V
5V
Vgs
Gate-Source Voltage
-5V
-4V
Ids
Drain Current
Idss
185mA
Igsf
Forward Gate Current
20mA
4mA
Pin
Input Power
22dBm
@ 3dB Compression
Tch
Channel Temperature
175oC
150 oC
Tstg
Storage Temperature
-65/175oC
-65/150 oC
Pt
Total Power Dissipation
1.1W
0.9W
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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